Method of forming dual damascene structure

专利名称：Method of forming dual damascene

structure

发明人：Yimin Huang,Tri-Rung Yew申请号：US09/123342申请日：19980728公开号：US06060379A公开日：20000509

摘要：A method of forming a dual damascene structure comprises the steps ofproviding a substrate having a first conductive layer formed thereon, and thensequentially forming a first dielectric layer, an anti- reflection layer and a second

dielectric layer over the substrate. Next, the first dielectric layer, the anti-reflection layerand the second dielectric layer are patterned to form a first opening that exposes theconductive layer. Thereafter, the second dielectric layer is patterned to form a trench (orsecond opening) in a position above the first conductive layer. The trench and the firstopening together form an opening of the dual damascene structure. Finally, a secondconductive material is deposited into the opening and the trench to form conductive linesand the dual damascene structures.

申请人：UNITED MICROELECTRONICS CORP.

代理机构：Thomas, Kayden, Horstemeyer & Risley

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