专利名称：Method of forming dual damascene
structure
发明人：Ji Soo Kim,Sangheon Lee,S. M. Reza Sadjadi申请号：US11016304申请日：20041216公开号：US07098130B1公开日：20060829
专利附图：
摘要：A method for forming dual damascene features in a dielectric layer. Vias arepartially etched in the dielectric layer. A trench pattern mask is formed over the dielectriclayer. Trenches are partially etched in the dielectric layer. The trench pattern mask is
stripped. The dielectric layer is further etched to complete etch the vias and the trenchesin the dielectric layer.
申请人：Ji Soo Kim,Sangheon Lee,S. M. Reza Sadjadi
地址：Pleasanton CA US,Sunnyvale CA US,Saratoga CA US
国籍：US,US,US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容
Copyright © 2019- 69lv.com 版权所有 湘ICP备2023021910号-1
违法及侵权请联系：TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务