Method of forming dual damascene structure

专利名称：Method of forming dual damascene

structure

发明人：Yimin Huang,Tri-Rung Yew申请号：US09524720申请日：20000314公开号：US06593223B1公开日：20030715

专利附图：

摘要：A method of forming a dual damascene structure comprises the steps ofproviding a substrate having a first conductive layer formed thereon, and then

sequentially forming a first dielectric layer, an anti-reflection layer and a second dielectric

layer over the substrate. Next, the first dielectric layer, the anti-reflection layer and thesecond dielectric layer are patterned to form a first opening that exposes the conductivelayer. Thereafter, the second dielectric layer is patterned to form a trench (or secondopening) in a position above the first conductive layer. The trench and the first openingtogether form an opening of the dual damascene structure. Finally, a second conductivematerial is deposited into the opening and the trench to form conductive lines and thedual damascene structures.

申请人：UNITED MICROELECTRONICS CORPORATION

代理机构：Hogan & Hartson LLP

代理人：William J. Kubida,Jed W. Caven

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