专利名称：Method of forming dual damascene
structure
发明人：Shiota, Atsushi申请号：EP02007149.4申请日：20020328公开号：EP1246239B1公开日：20080723
摘要：A method of dual damascene structure formation suitable for wiring onsemiconductors. The method of forming a dual damascene structure includes the stepsof forming an organic dielectric film and a metal oxide film on an inorganic dielectric film,forming a pattern on the resulting multilayer structure, and then etching the structure.
申请人：JSR CORP
地址：JP
国籍：JP
代理机构：TBK-Patent
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