HEMT Structure

专利名称：HEMT Structure发明人：Kohn, Erhard, Prof, Dr.申请号：EP90106417.0申请日：19900404公开号：EP0391380B1公开日：19971217

摘要：A high electron mobility transistor includes a donor layer of aluminum galliumarsenide (AlGaAs) for forming a two-dimensional electron gas (2DEG) in a proximatebuffer layer of gallium arsenide. The donor layer has a composition profile including arelatively high concentration of aluminum over a first thickness portion proximate thebuffer layer, a low and constant concentration of aluminum over a second thicknessportion distal from the buffer layer and a graded concentration of aluminum in a thirdthickness portion of the donor layer between the first and second thickness portions,transitioning between the high and the low concentrations of aluminum. The donor layerhas a doping profile including a high level doping spike in the first thickness portion and alow doping level over the second and third thickness portions.

申请人：SIEMENS AG

地址：DE

国籍：DE

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