专利名称：Nitride semiconductor laser device and
method for manufacturing the same
发明人：MIYACHI, Mamoru c/o Corp. Res. & Dev.
Lab.,OTA, Hiroyuki c/o Corp. Res. & Dev. Lab.
申请号：EP02007418.3申请日：20020328公开号：EP1248335B1公开日：20040929
摘要：A group-III nitride semiconductor laser device (1a) with excellent opticalcharacteristics and its manufacturing method are provided. The method does not includesteps that require high assembly precision. The group-III nitride semiconductor laserdevice comprises a substrate (3) which has a cut-out portion (6). A laser facet of a multi-layer body (2) is located near the cut-out portion (6) of the substrate (3).
申请人：PIONEER CORP
地址：JP
国籍：JP
代理机构：Goddar, Heinz J., Dr.
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