Non-volatile multi-state memory device with memory

专利名称：Non-volatile multi-state memory device with

memory cell capable of storing multi-statedata

发明人：Uchino, Takashi,Nambu, Nozomu,Hagiwara,

Akio

申请号：EP96306297.1申请日：19960830公开号：EP0760516B1公开日：20020227

摘要：Inputted digital data are held in a data register (20) and converted to multi-state analog amount by a resistance dividing circuit (21) and a decoder (22); a comparator(23) compares an analog amount read from a non-volatile memory cell (60) with aconverted analog amount and in accordance with this comparison result a writing voltageis supplied to a memory cell (60). A first bias generating circuit (500) is provided forgenerating 2 different types of bias voltages VBLH, VBLL as this writing voltage, MOStransistors (27), (28) are inserted as respective switches to the bias voltage supply linesand writing voltages are switched by selectively ON/OFF-controlling one of the MOStransistors (27), (28 ) in accordance with the upper bit D1 of the inputted digital data. As aresult, unnecessary writing time can be eliminated, time required for executing writing canbe reduced and circuit configuration can be simplified.

申请人：SANYO ELECTRIC CO

地址：JP

国籍：JP

代理机构：Cross, Rupert Edward Blount

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