Semiconductor device with trench gate

专利名称：Semiconductor device with trench gate发明人：Inoue, Tomoki, c/o Intellectual Property

Division,Sugiyama, Koichi, c/o IntellectualProperty Div.,Ninomiya, Hideaki, c/o

Intellectual Property Div.,Ogura, Tsuneo, c/oIntellectual Property Div.

申请号：EP00308599.0申请日：20000929公开号：EP10343A3公开日：20031217

专利附图：

摘要：An IGBT has a p-emitter layer (17) and p-base layer (12), which are arranged onboth sides of an n-base layer (11). A pair of main trenches (13) are formed to extendthrough the p-base layer (12) and reach the n-base layer (11). In a current path region(41) interposed between the main trenches (13), a pair of n-emitter layers (15) are formedon the surface of the p-base layer (12). A narrowing trench (22) is formed to extendthrough the p-base layer (12) and reach the n-base layer (11). The narrowing trench (22)narrows a hole flow path formed from the n-base layer (11) to the emitter electrode (19)through the p-base layer (12), thereby increasing the hole current resistance.

申请人：KABUSHIKI KAISHA TOSHIBA

地址：72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210-8572 JP

国籍：JP

代理机构：Granleese, Rhian Jane

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