Method for preventing the formation of electrical

专利名称：Method for preventing the formation of

electrical shorts via contact ILD voids

发明人：Kai Frohberg,Sven Mueller,Frank Feustel申请号：US11951092申请日：20071205公开号：US07741191B2公开日：20100622

专利附图：

摘要：Densely spaced gates of field effect transistors usually lead to voids in acontact interlayer dielectric. If such a void is opened by a contact via and filled withconductive material, an electrical short between neighboring contact regions of

neighboring transistors may occur. By forming a recess between two neighboring contactregions, the void forms at a lower level. Thus, opening of the void by contact vias isprevented.

申请人：Kai Frohberg,Sven Mueller,Frank Feustel

地址：Niederau DE,Wiednitz DE,Dresden DE

国籍：DE,DE,DE

代理机构：Williams, Morgan & Amerson

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