2SK3592-01L,S,SJFUJI POWER MOSFET200304
Super FAP-G SeriesN-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSee to P4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25°C unless otherwise specified)ItemSymbolRatingsUnitDrain-source voltageVDS150 VVDSX *5120 VContinuous drain currentID±57 AEquivalent circuit schematicPulsed drain currentID(puls]±228 AGate-source voltageVGS±30 VDrain(D)Non-repetitive Avalanche currentIAS *257 AMaximum Avalanche EnergyEAS *1272.5 mJMaximum Drain-Source dV/dtdVDS/dt *420kV/µsPeak Diode Recovery dV/dtdV/dt *35kV/µsMax. power dissipationPD Ta=25°C1.67WGate(G) Tc=25°C270Source(S)Operating and storageTch+150°Ctemperature rangeTstg-55 to +150°C*1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C<=*3 IF< -I=D, -di/dt=50A/µs, Vcc BV<=DSS, Tch 150°C<=*4 VDS 150V<=*5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified)ItemSymbolTest ConditionsMin. Typ. Max. UnitsDrain-source breakdown voltagetV(BR)DSSID= 250µA VGS=0V150VGate threshold voltageVGS(th)ID= 250µA VDS=VGS3.05.0VZero gate voltage drain current I TDSSVDS=150V VGS=0Vch=25°C25µA TVDS=120V VGS=0Vch=125°C250Gate-source leakage currentIGSS V VGS=±30VDS=0V10100nADrain-source on-state resistanceRDS(on) ID=20A VGS=10V3141mΩForward transcondutancegfsID=20A VDS=25V1326SInput capacitanceCissVDS=75V19402910pFOutput capacitanceCossVGS=0V310465Reverse transfer capacitanceCrssf=1MHz2436Turn-on time tontd(on)VCC=48V ID=20A2030nstrVGS=10V2639Turn-off time tofftd(off)RGS=10 Ω5075tf2030Total Gate ChargeQGVCC=75V5278nCGate-Source ChargeQGSID=40A1522.5Gate-Drain ChargeQGDVGS=10V1827Avalanche capabilityIAVL=123µH Tch=25°C57ADiode forward on-voltageVSDIF=40A VGS=0V Tch=25°C1.101.65VReverse recovery timetrrIF=40A VGS=0V0.14µsReverse recovery chargeQrr-di/dt=100A/µs Tch=25°C0.77µC ThermalcharacteristicsItem Symbol Test ConditionsMin. Typ. Max. UnitsThermal resistanceRth(ch-c) channel to case 0.463°C/WRth(ch-a) channel to ambient 75.0°C/Wwww.fujielectric.co.jp/denshi/scd
1
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2SK3592-01L,S,SJ
Characteristics
Allowable Power Dissipation300PD=f(Tc)250
200
]W[150
PD100
50
00
25
50
75
100
125
150
Tc [°C]Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
160
20V10V120
8V]A[ D80
I7.5V7.0V406.5V6.0VVGS=5.5V0
0246810
12
VDS [V]Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
]S[ sfg1
0.1
0.1
110100
ID [A]FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting TchE1000
AS=f(starting Tch):Vcc=48V
800
600
IAS=23A]Jm[ SAE 400
IAS=35A200
IAS=57A00
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
]10A[DI 1
0.1
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.15
VGS=5.5V6.0V0.12
6.5V7.0V7.5V] Ω [ 0.09
8V)no(S D10VR0.06
20V0.03
0.00
04080120160
ID [A]
2
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2SK3592-01L,S,SJ
FUJI POWER MOSFET
Drain-Source On-state ResistanceGate Threshold Voltage vs. Tch
RDS(on)=f(Tch):ID=20A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=250µA
1007.0906.56.080
5.55.0
max.] 70]V Ωm[4.5 [60 )h t)(4.0nSo(50max.G3.5S VDR403.0min.30typ.2.52.0201.5101.00.50-50
-25
0
25
50
75
100
125
150
0.0
-50
-25
0
25
50
75
100
125
150
Tch [ °C]
Tch [°C]
Typical Gate Charge Characteristics
Typical Capacitance
VGS=f(Qg):ID=40A, Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
10
1
1412Ciss10
10
0]Vcc= 75VV[8]FCoss nS[ GCV 6
10
-1
42Crss0
020406080
10
-2
10
-1
10
0
10
1
10
2
Qg [nC]VDS [V]
Typical Forward Characteristics of Reverse Diode
Typical Switching Characteristics vs. ID
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
3
t=f(ID):Vcc=48V, VGS=10V, RG=10Ωtf10
2
10
td(off)]A[] FsIn[ td(on)t1
10
1
tr0.110
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
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2SK3592-01L,S,SJ
FUJI POWER MOSFET
Maximum Avalanche Current PulsewidthI=f(t102AVAV):starting Tch=25°C,Vcc=48VSingle PulseA][ V101A I tnerru Ceh100cnalavA10
-110
-210-810-710-610-510-410-310-2tAV [sec]
Maximum Transient Thermal Impedance10
1
Zth(ch-c)=f(t):D=0
10
0
]W/C°[ )10
-1
c-hc(htZ10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
41 2 314231 2 3123http://www.fujielectric.co.jp/denshi/scd/
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