专利名称：Vias and methods of formation thereof发明人：Hanno Melzner申请号：US150093申请日：20160128公开号：US095965B2公开日：20170314
专利附图：
摘要：In accordance with an embodiment of the present invention, a semiconductordevice includes a first metal line in a first insulating layer, and a via having a portionsurrounding a portion of a first sidewall of the first metal line.
申请人：Infineon Technologies AG
地址：Neubiberg DE
国籍：DE
代理机构：Slater Matsil, LLP
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