MMBT3904LT3G;MMBT3904LT1G;MMBT3904LT1;MMBT3904LT3;中文规格书,Datasheet资料

NPN Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS••

Compliant

AEC−Q101 Qualified and PPAP Capable

S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements

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COLLECTOR

31BASE

2EMITTER

MAXIMUM RATINGS

Rating

Collector−Emitter VoltageCollector−Base VoltageEmitter−Base VoltageCollector Current − ContinuousCollector Current − Peak (Note 3)

SymbolVCEOVCBOVEBOICICM

Value40606.0200900

UnitVdcVdcVdcmAdcmAdc

13SOT−23 (TO−236)

CASE 318STYLE 6

2THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR−5 Board (Note 1) @TA = 25°CDerate above 25°CThermal Resistance, Junction−to−AmbientTotal Device Dissipation Alumina Substrate, (Note 2)@TA = 25°C

Derate above 25°CThermal Resistance, Junction−to−AmbientJunction and Storage Temperature

SymbolPD

Max2251.8556

UnitmWmW/°C°C/W

MARKING DIAGRAM

1AMMG

G1

RqJAPD

3002.4

RqJATJ, Tstg

417−55 to +150

mWmW/°C°C/W°C

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 󰀂 0.75 󰀂 0.062 in.

2.Alumina = 0.4 󰀂 0.3 󰀂 0.024 in. 99.5% alumina.3.Reference SOA curve.

1AM= Specific Device CodeM= Date Code*G= Pb−Free Package

(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing location.

ORDERING INFORMATION

Device

MMBT3904LT1GSMMBT3904LT1GMMBT3904LT3G

PackageSOT−23(Pb−Free)SOT−23(Pb−Free)

Shipping†3000 / Tape &

Reel10,000 / Tape &

Reel

†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 11

1

Publication Order Number:

MMBT3904LT1/D

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MMBT3904L, SMMBT3904L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)ON CHARACTERISTICS (Note 4)DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)(IC = 1.0 mAdc, VCE = 1.0 Vdc)(IC = 10 mAdc, VCE = 1.0 Vdc)(IC = 50 mAdc, VCE = 1.0 Vdc)(IC = 100 mAdc, VCE = 1.0 Vdc)Collector−Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)(IC = 50 mAdc, IB = 5.0 mAdc)Base−Emitter Saturation Voltage(IC = 10 mAdc, IB = 1.0 mAdc)(IC = 50 mAdc, IB = 5.0 mAdc)SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)SWITCHING CHARACTERISTICSDelay TimeRise TimeStorage TimeFall Time

(VCC = 3.0 Vdc, VBE = −0.5 Vdc,IC = 10 mAdc, IB1 = 1.0 mAdc)(VCC = 3.0 Vdc,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

tdtrtstf

−−−−

353520050

ns

fTCoboCibohiehrehfehoeNF

300−−1.00.51001.0−

−4.08.0108.0400405.0

MHzpFpFkWX 10−4

−mmhosdB

HFE

40701006030−−0.65−

−−300−−0.20.30.850.95

−

V(BR)CEOV(BR)CBOV(BR)EBO

IBLICEX

40606.0−−

−−−5050

VdcVdcVdcnAdcnAdc

Symbol

Min

Max

Unit

VCE(sat)

Vdc

VBE(sat)

Vdc

ns

4.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

DUTY CYCLE = 2%300 ns+3 V+10.9 V10 k27510 < t1 < 500 msDUTY CYCLE = 2%t1+3 V+10.9 V27510 k1N916CS < 4 pF*- 0.5 V< 1 ns0

CS < 4 pF*- 9.1 V′ * Total shunt capacitance of test jig and connectors

< 1 nsFigure 1. Delay and Rise Time

Equivalent Test CircuitFigure 2. Storage and Fall Time

Equivalent Test Circuit

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MMBT3904L, SMMBT3904L

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°CTJ = 125°C

107.0CAPACITANCE (pF)Q, CHARGE (pC)5.0

Cibo3.02.0

Cobo50003000200010007005003002001007050

QTQAVCC = 40 VIC/IB = 101.00.10.20.30.50.71.02.03.05.07.0102030401.02.03.05.07.01020305070100200

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

500300200100705030201075

td @ VOB = 0 V1.0

2.03.0

5.07.010

20

30

IC, COLLECTOR CURRENT (mA)

40 V15 V2.0 V5070100

200

IC/IB = 10500300200t r , RISE TIME (ns)100

705030201075

Figure 4. Charge Data

VCC = 40 VIC/IB = 10TIME (ns)tr @ VCC = 3.0 V1.02.03.05.07.01020305070100200

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time

500300200t s′ , STORAGE TIME (ns)100

705030201075

IC/IB = 20IC/IB = 10IC/IB = 20IC/IB = 10500300200

Figure 6. Rise Time

t′s = ts - 1/8 tfIB1 = IB2t f , FALL TIME (ns)VCC = 40 VIB1 = IB2IC/IB = 20100705030201075

IC/IB = 101.02.03.05.07.010203050701002001.02.03.05.07.01020305070100200

IC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA)

Figure 7. Storage TimeFigure 8. Fall Time

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MMBT3904L, SMMBT3904L

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

1210NF, NOISE FIGURE (dB)8200.1SOURCE RESISTANCE = 500 WIC = 100 mA0.20.41.02.04.0102040100SOURCE RESISTANCE = 200 WIC = 1.0 mANF, NOISE FIGURE (dB)SOURCE RESISTANCE = 200 WIC = 0.5 mASOURCE RESISTANCE = 1.0 kIC = 50 mA14

f = 1.0 kHz12108200.10.20.41.02.04.0102040100IC = 100 mAIC = 1.0 mAIC = 0.5 mAIC = 50 mAf, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Figure 10.

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

300

ho e , OUTPUT ADMITTANCE ( m mhos)5.0

10

1005020105210.1

0.2

0.30.51.02.03.0

IC, COLLECTOR CURRENT (mA)

5.0

10

h f e , CURRENT GAIN200

1007050

30

0.10.2

0.30.51.02.03.0

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

20h i e , INPUT IMPEDANCE (k OHMS)105.0

107.05.03.02.0

Figure 12. Output Admittance

2.01.00.50.2

h r e , VOLTAGE FEEDBACK RATIO (X 10 - 4 )5.0

10

1.00.70.50.1

0.2

0.30.51.02.03.0

IC, COLLECTOR CURRENT (mA)

5.0

10

0.10.2

0.30.51.02.03.0IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

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Figure 14. Voltage Feedback Ratio

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MMBT3904L, SMMBT3904L

TYPICAL STATIC CHARACTERISTICS

1000TJ = +150°Ch F E , DC CURRENT GAIN+25°C- 55°CVCE = 1.0 V1001010.11.010IC, COLLECTOR CURRENT (mA)

1001000Figure 15. DC Current Gain

V E , COLLECTOR EMITTER VOLTAGE (VOLTS)C1.0

TJ = 25°C0.8

IC = 1.0 mA10 mA30 mA100 mA0.60.4

0.20

0.01

0.020.030.050.070.10.20.30.50.71.02.03.05.07.010

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

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MMBT3904L, SMMBT3904L

0.8VCE(sat), COLLECTOR−EMITTERSATURATION VOLTAGE (V)150°C25°C−55°CVBE(sat), BASE−EMITTERSATURATION VOLTAGE (V)0.70.60.50.40.30.20.100.0010.010.11IC/IB = 101.4IC/IB = 101.21.00.80.60.40.2150°C−55°C25°C0.00010.0010.010.11IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)

Figure 17. Collector Emitter Saturation Voltage

vs. Collector Current

VBE(on), BASE−EMITTER VOLTAGE (V)1.41.21.00.80.60.4150°C0.2−55°C25°CVCE = 1 VCOEFFICIENT (mV/ ° C)1.00.5

Figure 18. Base Emitter Saturation Voltage vs.

Collector Current

+25°C TO +125°CqVC FOR VCE(sat)- 55°C TO +25°C0- 0.5

- 55°C TO +25°C- 1.0

+25°C TO +125°C- 1.5

qVB FOR VBE(sat)0.00010.0010.010.11- 2.0

020406080100120140160180200

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (mA)

Figure 19. Base Emitter Voltage vs. Collector

Current

1000fT, CURRENT−GAIN−BANDWIDTHPRODUCT (MHz)VCE = 1 VTA = 25°C0.1100IC (A)1Figure 20. Temperature Coefficients

1 s100 msThermal Limit1 ms10 ms0.01100.111010010000.001Single Pulse Test@ TA = 25°C0.010.11VCE (Vdc)

10100IC, COLLECTOR CURRENT (mA)

Figure 21. Current Gain Bandwidth vs.

Collector Current

Figure 22. Safe Operating Area

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MMBT3904L, SMMBT3904L

PACKAGE DIMENSIONS

SOT−23 (TO−236)CASE 318−08ISSUE AP

DSEE VIEW C3NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.

3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUMTHICKNESS OF BASE MATERIAL.

4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.

DIMAA1bcDEeLL1HEqMIN0.0.010.370.092.801.201.780.100.352.100°MILLIMETERS

NOMMAX1.001.110.060.100.440.500.130.182.903.041.301.401.902.040.200.300.0.692.402.−−−10°MIN0.0350.0010.0150.0030.1100.0470.0700.0040.0140.0830°INCHESNOM0.0400.0020.0180.0050.1140.0510.0750.0080.0210.094−−−MAX0.0440.0040.0200.0070.1200.0550.0810.0120.0290.10410°E12HEcebq0.25AA1LL1VIEW C

STYLE 6:

PIN 1.BASE

2.EMITTER3.COLLECTOR

SOLDERING FOOTPRINT*

0.950.0370.950.0372.00.0790.90.035SCALE 10:10.80.031mmǓǒinches*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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