FBE22-06N1;中文规格书,Datasheet资料

in ISOPLUS i4-PAC™

1

VRRM = 600 VId(AV)M = 20 Atrr = 80 ns

45

1

5

2

Pin 3 = not connected

Rectifier BridgeSymbolVRRMIdAV Id(AV)MIFSMEASPtotSymbolVFIRIRMtrrRthJCTC = 90°C, sine 180° (per diode)TC = 90°C

TVJ = 25°C; t = 10 ms; sine 50 Hz

IAS = 0.9 A; LAS = 180 µH; TC = 25°C; non repetitiveTVJ = 25°C (per diode)ConditionsIF = 15 A; TVJ = 25°CTVJ = 125°CConditions

Maximum Ratings6001020400.135

VAAAmJW

Features

• HiPerFRED™ Epitaxial Diodes - fast and soft reverse recovery – low switching losses - avalanche rated - low leakage current

• ISOPLUS i4-PAC™ package - isolated back surface

- enlarged creepage towards heatsink - application friendly pinout - high reliability

- industry standard outlineApplicationsVVmAmAAns3.5K/W• high frequency rectifiers, output rectifiers of switched mode power supplies

• single phase mains rectifiers with mi-nimized electromagnetic emissions• power factor correction in conjunction with boost chopper (FID.../FMD... type)

Characteristic Valuestyp.2.01.50.11180max.tbd0.06VR = VRRM; TVJ = 25°C TVJ = 125°CIF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V(per diode)Data according to IEC 60747 and refer to a single rectifier unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

20081125a

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FBE 22-06N1ComponentSymbolTVJTstgVISOLFC

Symbol

IISOL < 1 mA; 50/60 Hzmounting force with clip ConditionsConditionsMaximum Ratings-55...+150-55...+125

250020 ... 120

°C°CV~N

Characteristic Valuesmin.

typ.

max.

1.75.5

0.159

dS, dAdS, dARthCH

Weight

pin - pin

pin - backside metalwith heatsink compound

mmmmK/W

g

Die konvexe Form des Substrates ist typ. < 0,05 mmüber der Kunststoffoberfläche der BauteilunterseiteThe convex bow of substrate is typ. < 0.05 mm overplastic surface level of device bottom side

IXYS reserves the right to change limits, test conditions and dimensions.

20081125a

© IXYS All rights reserved

2 - 2

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FBE22-06N1