专利名称：Fin field effect transistor
发明人：Hung-Ta Lin,Chu-Yun Fu,Hung-Ming
Chen,Shu-Tine Yang,Shin-Yeh Huang
申请号：US15194222申请日：20160627公开号：US09716091B2公开日：20170725
专利附图：
摘要：A fin field effect transistor (FinFET) including a first insulation region and asecond insulation region and fin there between. A gate stack is disposed over a firstportion of the fin. A strained source/drain material is disposed over a second portion of
the fin. The strained source/drain material has a flat top surface extending over the firstand second insulation regions. The first insulation region may include a tapered topsurface.
申请人：Taiwan Semiconductor Manufacturing Company, Ltd.
地址：Hsin-Chu TW
国籍：TW
代理机构：Haynes and Boone, LLP
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容
Copyright © 2019- 69lv.com 版权所有 湘ICP备2023021910号-1
违法及侵权请联系：TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务