CMOS reference current source

专利名称：CMOS reference current source发明人：Santiago Iriarte Garcia申请号：US11536799申请日：20060929公开号：US07573325B2公开日：20090811

专利附图：

摘要：A CMOS reference current source comprises two circuit branches connected inparallel between supply terminals. The first circuit branch includes a series connection ofa bias current source (MP) and a first MOS transistor (MN) of a first conductivity type. Thesecond circuit branch includes a series connection of a diode-connected MOS transistor

(MP) of a second conductivity type, a second MOS transistor (MN) of the first conductivitytype and a third MOS transistor (MN) of the first conductivity type. The first MOStransistor (MN ) of the first conductivity type has its gate connected to the drain of thethird MOS transistor (MN) of the first conductivity type. The second MOS transistor (MN)of the first conductivity type has its gate connected to the drain of the first MOStransistor (MN) of the first conductivity type. The third MOS transistor (MN) the firstconductivity type has its gate connected to a bias source (MN).

申请人：Santiago Iriarte Garcia

地址：Valencia ES

国籍：ES

代理人：John J. Patti,Wade J. Brady, III,Frederick J. Telecky, Jr.

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