METHODS FOR FABRICATION OF SEMICONDUCTOR STRUCTURE

专利名称：METHODS FOR FABRICATION OF

SEMICONDUCTOR STRUCTURES USINGLASER LIFT-OFF PROCESS, AND RELATEDSEMICONDUCTOR STRUCTURES

发明人：Mariam Sadaka,Bernard Aspar,Chrystelle

Lagahe Blanchard

申请号：US144165申请日：20130708

公开号：US20150179520A1公开日：20150625

专利附图：

摘要：Methods of fabricating a semiconductor structure include bonding a carrierwafer over a substrate, removing at least a portion of the substrate, transmitting laserradiation through the carrier wafer and weakening a bond between the substrate and thecarrier wafer, and separating the carrier wafer from the substrate. Other methods includeforming circuits over a substrate, forming trenches in the substrate to defineunsingulated semiconductor dies, bonding a carrier substrate over the unsingulatedsemiconductor dies, transmitting laser radiation through the carrier substrate andweakening a bond between the unsingulated semiconductor dies and the carriersubstrate, and separating the carrier substrate from the unsingulated semiconductordies. Some methods include thinning at least a portion of the substrate, leaving theplurality of unsingulated semiconductor dies bonded to the carrier substrate.

申请人：Soitec

地址：Crolles Cedex FR

国籍：FR

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