Low noise MOSFET employing selective drive signals

专利名称：Low noise MOSFET employing selective drive

signals

发明人：Jun Miyake申请号：US08/430292申请日：19950428公开号：US05623221A公开日：19970422

摘要：In a driving circuit for generating driving signals for controlling and switching onand off a first output element employed in an output circuit for generating a high-leveloutput signal and a second output element employed in the output circuit for generatinga low-level output signal in a mutually complementary manner, the conductance of thedriving circuit is controlled so that it increases gradually with the lapse of time. Bysequentially controlling the conductance of the driving circuit for generating the drivingsignals, the rates of change of the driving signals can be controlled in a smooth andstable manner and output currents can thus be changed smoothly to result in high-speedoperation of an output signal with a reduced amount of noise.

申请人：HITACHI, LTD.

代理机构：Fay Sharpe Beall Fagan Minnich & McKee

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