LNA4602L资料

Infrared Light Emitting Diodes

LNA4602LGaAlAs Infrared Light Emitting DiodeFor optical control systemsR1.75±0.1Unit: mmsFeatures•High-power output, high-efficiency•Light-emitting pattern of almost point source•Ultra-miniature, thin side-view type package4.5±0.32.54±0.254.2±0.32.31.9Not soldered2.42.4φ3.5±0.24.8±0.31.22.81.82− 0.98±0.21.66±0.2512.8 min.sAbsolute Maximum Ratings Ta = 25°CParameterPulse forward current *Reverse voltage (DC)Operating ambient temperatureStorage temperatureSymbolIFPVRToprTstgRatings1.23−20 to +60−30 to +70UnitAV°C°C10 min.2− 0.45±0.150.45±0.1512.5421: Cathode2: AnodeNote)*: f = 100 Hz, Duty Cycle = 0.1%sElectro-optical Characteristics Ta = 25°CParameterRadiant powerPeak emission wavelengthSpectral half band widthForward voltage (DC)Peak forward voltageReverse current (DC)Half-power angleNote)1.∆PO≤35% at t = 10 000 shotSymbolPOλP∆λVFVFPIRθIF = 50 mAIF = 50 mAIF = 50 mAIF = 50 mAIFP = 1 A, tW = 0.14 msVR = 3 VThe angle in which radiant intencity is 50%30Conditionsmin3850351.52.91.93.8100typmaxUnitmWnmnmVVµA°f = 500 Hz, Duty = 7%32 ms1 s (1 shot)2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz. PO (fC MHz) Cut-off Frequcency: 200 MHzfC: 10 log= −3PO (1 MHz)1