THROUGH SILICON VIA STRUCTURE AND MANUFACTURING ME

专利名称：THROUGH SILICON VIA STRUCTURE AND

MANUFACTURING METHOD THEREOF

发明人：Hsin-Yu Chen,Ching-Li Yang申请号：US13207406申请日：20110810

公开号：US20130037953A1公开日：20130214

专利附图：

摘要：A manufacturing method for a through silicon via structure includes thefollowing steps. First, a substrate is provided, and a through silicon hole is formed in thesubstrate. An outer plasma enhanced oxide layer is formed on the surface of the through

silicon hole, and then a liner layer is formed on the surface of the outer plasma enhancedoxide layer. An inner plasma enhanced oxide layer is formed on the surface of the linerlayer. Finally, a conductor is formed on the surface of the inner plasma enhanced oxidelayer to completely fill the through silicon hole.

申请人：Hsin-Yu Chen,Ching-Li Yang

地址：Nantou County TW,Ping-Tung Hsien TW

国籍：TW,TW

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