Method for fabricating an electrical component

专利名称：Method for fabricating an electrical

component

发明人：Alejandro Avellan,Thomas Hecht,Stefan

Jakschik,Uwe Schroeder

申请号：US11399811申请日：20060407

公开号：US20060234463A1公开日：20061019

专利附图：

摘要：An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric () and at least one

connection electrode () are fabricated. To enable the capacitors fabricated to haveoptimum storage properties even for very small capacitor structures, the dielectric () orthe connection electrode () are formed in such a manner that transient polarizationeffects are prevented or at least reduced.

申请人：Alejandro Avellan,Thomas Hecht,Stefan Jakschik,Uwe Schroeder

地址：Dresden DE,Dresden DE,Kessel-Lo (Leuven) BE,Dresden DE

国籍：DE,DE,BE,DE

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