Memory management method, memory storage device an

专利名称：Memory management method, memory

storage device and memory control circuitunit

发明人：Hiroshi Watanabe申请号：US14934154申请日：20151106公开号：US09418731B1公开日：20160816

专利附图：

摘要：A memory management method, a memory storage device and a memorycontrol circuit unit are provided. The method comprises: obtaining a first threshold

voltage distribution of memory cells; grouping the first threshold voltage distribution toa plurality of first threshold voltage groups; obtaining a second threshold voltagedistribution of the memory cells; grouping the second threshold voltage distribution to aplurality of second threshold voltage groups; allocating a memory cell among thememory cells to a virtual block if a threshold voltage pair of the memory cell belongs toa specific group of the first threshold voltage groups and a specific group of the secondthreshold voltage groups, such that the first memory cell is operated under a specific-level cell mode. Accordingly, the reliability of memory cells may be improved withoutsignificantly sacrificing the capacity of the rewritable non-volatile memory module.

申请人：PHISON ELECTRONICS CORP.

地址：Miaoli TW

国籍：TW

代理机构：Jianq Chyun IP Office

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