专利名称:HIGH-SPEED COMPRESSION ARCHITECTURE
FOR MEMORY
发明人:Jeffrey T. Feng申请号:US12625034申请日:20091124
公开号:US20110121867A1公开日:20110526
专利附图:
摘要:Memory design techniques are disclosed that provide a high compression ratioat no loss in speed. The techniques can be embodied, for instance, in heterojunctionbipolar transistor (HBT) based ROMs. By embedding compression logic (e.g., XOR)
functionality directly into the address decoders and sense amplifiers of the memorydevice, a high compression ratio is achieved at no loss in speed. For example, the logic-based compression functionality can be directly implemented into the buffers that formthe address decoder as well as the sense amplifiers.
申请人:Jeffrey T. Feng
地址:Cambridge MA US
国籍:US
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