5-V Low-Drop Voltage RegulatorTLE 4265
Bipolar IC
Features
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Output voltage tolerance ≤ ± 2 %Low-drop voltage
Very low standby current consumptionOvertemperature protectionReverse polarity protectionShort-circuit proof
Setable reset thresholdWide temperature range
Suitable for use in automotive electronics P-TO220-5-1 TypeTLE 4265 TLE 4265SOrdering CodeQ67000-A9138Q67000-A9277PackageP-TO220-5-1P-TO220-5-2P-TO220-5-2Functional DescriptionTLE 4265 is a 5-V low-drop voltage regulator in a TO220-5 package. Maximum inputvoltage is 45V. It can produce an output current of > 200 mA. The IC is shortcircuit-proofand thermal protected.ApplicationThe IC regulates an input voltage VI in the range 6 V < VI < 45 V to VQrated=5.0 V. A resetsignal is generated for an output voltage VQ of < 4.5 V. The reset delay can be set withan external capacitor. This voltage regulator is especially suitable for microprocessorapplications in automobiles.Semiconductor Group11998-11-01
TLE 4265
Pin Configuration(top view)
P-TO220-5-1P-TO220-5-212345VΙGNDVQQRESDRESAEP01492Pin Definitions and Functions Pin12345
Symbol
Function
Input voltage; block direct on IC with ceramic capacitor to GNDReset output; open-collector output connected to output across resistor of 30 kΩGround
Reset delay; wire with capacitor to GND for setting delay5-V output voltage; block to GND with 22-µF capacitor
VI
QRESGNDDRES
VQ
Semiconductor Group21998-11-01
TLE 4265
Circuit Description
The control amplifier compares a highly precise reference voltage, produced by resistoralignment, to a voltage that is proportional to the output voltage and drives the base ofthe series transistor via a buffer. A saturation control, a function of the load current,prevents any over-saturating of the power element. If the output voltage drops below4.5V, the external reset-delay capacitor is discharged by the reset generator. If thevoltage on the capacitor reaches the lower threshold VST, a signal is triggered on thereset output and not canceled again until the upper threshold VdT is exceeded. The IC isprotected against overload, overtemperature and reverse polarity. TemperatureSensorIn-1putControlAmplifierAdjustmentBandgapReference+-BufferSaturationControl andProtection5OutputResetGenerator4ResetDelay2ResetOutput3GNDAEB01493Semiconductor Group31998-11-01
TLE 4265
Block Diagram
Absolute Maximum RatingsTJ = – 40 to 150 °C
ParameterSymbolLimit Valuesmin.
max.
UnitNotes
InputInput voltageReset OutputVoltageReset DelayVoltageOutputOutput voltageOutput currentGNDCurrentTemperaturesJunction temperatureStorage temperatureOperating Range Input voltageJunction temperature
VI
– 4245V–
VR
– 0.342V–
Vd
– 0.342V–
VQIQ
– 0.3–
7–
V–
–
Limited internally
IGND
– 0.1–A–
TJTstg
–– 50
150150
°C°C
––
VITJ
–– 40
45150
V°C
––
Semiconductor Group41998-11-01
TLE 4265
Absolute Maximum Ratings (cont’d)TJ = – 40 to 150 °CParameter
Symbol
Limit Valuesmin.
Thermal ResistanceJunction ambientJunction-case
max.
UnitNotes
RthjaRthjc
––
7010
K/W–K/W–
Optimum reliability and lifetime can be ensured in integrated circuits by not exceeding ajunction temperature of 125°C during operation. Although operation up to the maximumpermissible junction temperature of 150°C is possible, such boundary conditions, ifsustained, may affect device reliability.
Characteristics
VI = 13.5 V; TJ = 25 °C (unless specified otherwise) Parameter
Symbol
Limit Valuesmin.
Output voltage
typ.5
max.5.1
V
5mA≤ IQ ≤ 150 mA6 V ≤ VI ≤ 28 V
– 40 °C ≤ TJ ≤ 125 °C–
UnitTest Condition
VQ
4.9
Output-current limitingCurrent consumptionIq = II – IQ
Current consumptionIq = II – IQ
Current consumptionIq = II – IQDrop voltageLoad regulation
IQIqIqIqVDr
∆VQ
200–––––
25075010150.35–
–100015200.525
mAµAmAmAVmV
IQ = 0 mAIQ = 150 mAIQ = 150 mAVI = 4.5 VIQ = 150 mA1)IQ = 5 to 150 mA
Semiconductor Group51998-11-01
TLE 4265
Characteristics (cont’d)
VI = 13.5 V; TJ = 25 °C (unless specified otherwise) Parameter
Symbol
Limit Valuesmin.
Line regulation
∆VQ
––
typ.1554
max.25–
mVdB
UnitTest Condition
VI = 6 to 28 VIQ = 150 mAfr = 100 HzVr = 0.5 Vpp
Supply-voltage rejectionSVR
Reset GeneratorSwitching thresholdSaturation voltageSaturation voltageCharge currentDelay switching thresholdDelayDelay
VRTVRVCIchVdttdtt
4.2––71.5––
4.50.150101.8182
4.80.4100142.1––
VVmVµAVmsµs
–
IR = 1 mAVQ < VRT
––
Cd = 100 nFCd = 100 nF
1)Drop voltage = VI – VQ (measured at point where VQ is 100 mV smaller than at VI = 13.5 V)
Semiconductor Group61998-11-01
TLE 4265
ΙΙ1000 Fµ470 nF15ΙQ22 FµTLE 426524Ιch3ΙGND5.6 kΩΙRVQVRVΙVCCDAES01494Test Circuit
Input6V to 45 V470 nFResetTo MC15Output2TLE 42654100 nF22 Fµ3AES01495Application Circuit
Semiconductor Group71998-11-01
Drop Voltage versus Output Current
700AED01496VDrmV500400300T200j=25C1000050100150200mA300ΙQCurrent Consumption versus Input Voltage
30AED01498ΙqRL=25ΩmA201510500102030V50VΙSemiconductor GroupTLE 4265
Current Consumption versusOutput Current
28AED01497ΙqmA20VΙ=13.5 V1612840050100150200mA300ΙQOutput Voltage versus Input Voltage
12AED01499VQRL=25ΩV864200246V10VΙ81998-11-01
Charge Current versus Temperature
14AED01500ΙchµAΙch10VΙ=13.5 V8VC=1.5 V642-4004080C160TjOutput Voltage versus Temperature
5.10AED01502VQVVΙ=13.5 V5.004.904.804.70-4004080C160TjSemiconductor GroupTLE 4265
Switching Voltage VdT and VST versus Temperature
3.2AED01501VdTVVΙ=13.5 V2.42.0VdT1.61.20.80.40-4004080C160TjOutput Voltage versus Input Voltage
300AED01503ΙQmATj=25C25020015010050001020304050Vj91998-11-01
TLE 4265
Package Outlines
P-TO220-5-1(Plastic Transistor Single Outline)10+0.410.2-0.23.75+0.1 2.84.6-0.21x45˚1.27+0.119.5 max16±0.48.8-0.22.64.5±0.48.4±0.411.750.8+0.11)0.4+0.10.6M5xSorts of Packing
Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”.Semiconductor Group
10
Dimensions in mm
1998-11-01
GPT051071) 1 at dam bar (max 1.8 from body)-0.151) 1 im Dichtstegbereich (max 1.8 vom Körper)-0.158.6±0.310.2±0.315.4±0.3TLE 4265
P-TO220-5-2(Plastic Transistor Single Outline)10+0.410.2-0.23.75+0.1 4.6-0.21x45˚1.27+0.12.810.9±0.211.7512.9±0.20.4+0.10.8+0.11)Sorts of Packing
Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”.Semiconductor Group
11
Dimensions in mm
1998-11-01
GPT052562.6±0.150.6M5x1) 1 at dam bar (max 1.8 from body)-0.151) 1 im Dichtstegbereich (max 1.8 vom Körper)-0.15 8.8-0.215.4±0.3
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