专利名称：Method of surface treatment of
semiconductor substrates
发明人：Bhardwaj, Jyoti Kiron,Ashraf,
Huma,Khamsehpour, Babak,Hopkins,Janet,Ryan, Martin Edward,Haynes, DavidMark,Hynes, Alan Michael
申请号：EP97305641.9申请日：19970728公开号：EP0822584A3公开日：19980513
专利附图：
摘要：A method of depositing a side wall passivation layer on an etched feature in asemiconductor substrate, comprising placing the substrate in a vacuum chamber, strikinga plasma, and introducing a hydrocarbon deposition gas to deposit a carbon orhydrocarbon layer.
申请人：Surface Technology Systems Limited
地址：Imperial Park, Newport Gwent, Wales NP1 9UJ GB
国籍：GB
代理机构：Dunlop, Brian Kenneth Charles
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