PAGE BUFFER AND MEMORY DEVICE INCLUDING THE SAME

专利名称：PAGE BUFFER AND MEMORY DEVICE

INCLUDING THE SAME

发明人：In Gon YANG申请号：US15350512申请日：20161114

公开号：US20170358335A1公开日：20171214

专利附图：

摘要：Provided herein are a page buffer and a memory device having the same. Thepage buffer may include: a latch circuit comprising a first node configured to be set to afirst level in response to a sense amplifier strobe signal when an operation of setting up a

bit line is performed during a program operation of a semiconductor memory device; acurrent control circuit configured to supply an internal power to a current sensing nodedepending on a value of the first level of the first node; and a page buffer sensing circuitconfigured to couple the bit line to the current sensing node in response to a pagebuffer sensing signal and control a potential level of the bit line depending on a potentiallevel of the page buffer sensing signal.

申请人：SK hynix Inc.

地址：Gyeonggi-do KR

国籍：KR

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