专利名称:INTEGRATED CIRCUIT AND
MANUFACTURING METHOD THEREOF
发明人:Herb He HUANG,Clifford Ian DROWLEY申请号:US14597126申请日:20150114
公开号:US20150214296A1公开日:20150730
专利附图:
摘要:An integrated circuit includes a semiconductor substrate, and at least twotransistors connected in series on the semiconductor substrate, wherein each transistorshares a source electrode or a drain electrode with an adjacent transistor. The integrated
circuit also includes a hermetic cavity disposed on the source electrode and the drainelectrode, between gate electrodes of adjacent transistors. The source electrodedisposed at a first end portion of the series of transistors is in direct contact with asource interconnect, and the drain electrode disposed at a second end portion of theseries of transistors is in direct contact with a drain interconnect.
申请人:SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI)CORPORATION
地址:Shanghai CN
国籍:CN
更多信息请下载全文后查看
因篇幅问题不能全部显示,请点此查看更多更全内容
Copyright © 2019- 69lv.com 版权所有 湘ICP备2023021910号-1
违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务