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INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREO

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专利内容由知识产权出版社提供

专利名称:INTEGRATED CIRCUIT AND

MANUFACTURING METHOD THEREOF

发明人:Herb He HUANG,Clifford Ian DROWLEY申请号:US14597126申请日:20150114

公开号:US20150214296A1公开日:20150730

专利附图:

摘要:An integrated circuit includes a semiconductor substrate, and at least twotransistors connected in series on the semiconductor substrate, wherein each transistorshares a source electrode or a drain electrode with an adjacent transistor. The integrated

circuit also includes a hermetic cavity disposed on the source electrode and the drainelectrode, between gate electrodes of adjacent transistors. The source electrodedisposed at a first end portion of the series of transistors is in direct contact with asource interconnect, and the drain electrode disposed at a second end portion of theseries of transistors is in direct contact with a drain interconnect.

申请人:SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI)CORPORATION

地址:Shanghai CN

国籍:CN

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