INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREO

专利名称：INTEGRATED CIRCUIT AND

MANUFACTURING METHOD THEREOF

发明人：Herb He HUANG,Clifford Ian DROWLEY申请号：US14597126申请日：20150114

公开号：US20150214296A1公开日：20150730

专利附图：

摘要：An integrated circuit includes a semiconductor substrate, and at least twotransistors connected in series on the semiconductor substrate, wherein each transistorshares a source electrode or a drain electrode with an adjacent transistor. The integrated

circuit also includes a hermetic cavity disposed on the source electrode and the drainelectrode, between gate electrodes of adjacent transistors. The source electrodedisposed at a first end portion of the series of transistors is in direct contact with asource interconnect, and the drain electrode disposed at a second end portion of theseries of transistors is in direct contact with a drain interconnect.

申请人：SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI)CORPORATION

地址：Shanghai CN

国籍：CN

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