METHOD FOR FORMING FERROELECTRIC MEMORY CAPACITOR

专利名称：METHOD FOR FORMING FERROELECTRIC

MEMORY CAPACITOR

发明人：CELII, Francis, G.,MAHESH, Thakre,

J.,SUMMERFELT, Scott, R.

申请号：EP04100908.5申请日：20040305公开号：EP1455385B1公开日：20190612

摘要：One ferroelectric memory capacitor is formed by forming a barrier layer, thefirst metal layer, a ferroelectric layer, a second metal layer and a hard mask layer, ondielectric layer (70). Using the hard mask layer (255) of composition, layer is discharged,to form the barrier layer (205) of an etching, and the first metal layer (215) of etching,and the ferroelectric layer (225) of etching, and the second metal layer (235,245) ofetching. Etch layer forms a ferroelectric memory capacitor (270), and with side wall, shapeis at an angle, has the plane of the upper surface of the dielectric layer (70) between 78degree and 88 degree. The process for being used for etching layer is the plasmaprocesses of the temperature execution between 200 degrees Celsius and 500 degreesCelsius.

申请人：TEXAS INSTRUMENTS INC

地址：US

国籍：US

代理机构：Zeller, Andreas

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