Compositions and methods for the selective etching

专利名称：Compositions and methods for the selective

etching of polysilicon for wafer reclamation

发明人：Biao Wu申请号：US10139950申请日：20020506

公开号：US20020127859A1公开日：20020912

专利附图：

摘要：The present invention provides methods for selectively stripping polysilicon-containing films from oxide surfaces using an etching composition including a fluoride ionsource and an oxidant. The etching composition exhibits a high degree of selectivity

between polysilicon and oxide, such that the underlying oxide surface or film layer acts asa stop layer, thereby protecting the underlying substrate from the etching composition.Furthermore, the etching composition is effective at substantially at ambienttemperature, thereby avoiding the potential safety concerns that may arise whenchemicals are heated in manufacturing situations.

申请人：WU BIAO

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