Critical dimension control of printed features usi

专利名称：Critical dimension control of printed

features using non-printing fill patterns

发明人：Chung-Hsi J. Wu,Timothy Allan

Brunner,Shahid Butt,Patrick Speno

申请号：US10425817申请日：20030429公开号：US07074525B2公开日：20060711

专利附图：

摘要：Non-uniformity and image shortening are substantially reduced in an imageprinted on a substrate using a photolithographic mask in which the mask pattern includes

at least one lines and spaces array adjacent to at least one clear region. At least one linefeature is incorporated within the clear region of the mask pattern and is disposed inproximity to the lines and spaces array. The line feature has a line width that is smallerthan a minimum resolution of the optical projection system. The image is printed byilluminating the photolithographic mask and projecting light transmitted through thephotolithographic mask onto the substrate using the optical projection system.

申请人：Chung-Hsi J. Wu,Timothy Allan Brunner,Shahid Butt,Patrick Speno

地址：Wappingers Falls NY US,Ridgefield CT US,Ossining NY US,Hopewell Junction NYUS

国籍：US,US,US,US

代理机构：Slater & Matsil, L.L.P.

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