专利名称：A semiconductor integrated circuit device发明人：Iio, Masaya申请号：EP86309703.6申请日：19861212公开号：EP0226469A1公开日：19870624
专利附图：
摘要：A semiconductor integrated circuit device comprising: at least two NPNtransistors (5,l8) whose bases (7,l4) and emitters (8,l3) are connected to the ground andwhose collectors are connected to an input terminal. One of said NPN transistors has alower breakdown starting voltage and a higher breakdown maintaining voltage than
those of the other of said NPN transistors.
申请人：MITSUBISHI DENKI KABUSHIKI KAISHA
地址：2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP
国籍：JP
代理机构：Beresford, Keith Denis Lewis
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