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BCP54-10资料

来源:六九路网
SOT223 NPN SILICON PLANARMEDIUM POWER TRANSISTOR

ISSUE 3 󰂖 AUGUST 19957FEATURES

*Suitable for AF drivers and output stages*High collector current and Low VCE(sat)COMPLEMENTARY TYPE 󰂖 PARTMARKING DETAILS 󰂖

BCP51BCP54

BCP54 󰂖 10BCP54 󰂖 16

C

BCP54ECB

ABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse CurrentContinuous Collector CurrentPower Dissipation at Tamb =25°COperating and Storage TemperatureRangeSYMBOLVCBOVCEOVEBOICMICPtotTj:TstgVALUE454551.512-55 to +150UNITVVVAAW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERCollector-BaseBreakdown Voltage Collector-EmitterBreakdown VoltageEmitter-BaseBreakdown VoltageCollector Cut-Off CurrentCollector-EmitterSaturation VoltageBase-Emitter Turn-OnVoltageSYMBOLV(BR)CBOV(BR)CEOV(BR)EBOICBOMIN.4545510020100.51.0402563100250100160100160250MHzTYP.MAX.UNITVVVnACONDITIONS.IC=100µAIC= 10mA *IE=10µAVCB=30VVCB=30V, Tamb=150°CVEB=5VIC=500mA, IB=50mA*IC=500mA, VCE=2V*IC=150mA, VCE=2V*IC=500mA, VCE=2V*IC=150mA, VCE=2V*IC=150mA, VCE=2V*IC=50mA, VCE=10V,f=100MHzµAµAEmitter Cut-Off CurrentIEBOVCE(sat)VBE(on)VVStatic Forward CurrenthFETransfer RatioBCP54-10BCP54-16Transition FrequencyfT*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%3 - 16

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